Mohamad Isa, M., Ahmad, N., Packeer, F., & Missous, M. (2015). Optimization of Gate Recess Step and Elimination of the Dome Effect for Highly Reliable and Reproducible Novel pHEMT Device. Journal of Engineering and Technology (JET), 6(1), 13–23. Retrieved from https://jet.utem.edu.my/jet/article/view/119