MOHAMAD ISA, M.; AHMAD, N.; PACKEER, F.; MISSOUS, M. Optimization of Gate Recess Step and Elimination of the Dome Effect for Highly Reliable and Reproducible Novel pHEMT Device. Journal of Engineering and Technology (JET), [S. l.], v. 6, n. 1, p. 13–23, 2015. Disponível em: https://jet.utem.edu.my/jet/article/view/119. Acesso em: 29 apr. 2024.