Mohamad Isa M, Ahmad N, Packeer F, Missous M. Optimization of Gate Recess Step and Elimination of the Dome Effect for Highly Reliable and Reproducible Novel pHEMT Device. JET [Internet]. 2015Jun.30 [cited 2024Nov.23];6(1):13-2. Available from: https://jet.utem.edu.my/jet/article/view/119