Design and Fabrication of n-ISFET using Si3N4 as a Sensing Membrane for pH Measurement

Authors

  • C.S. Fatt Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.
  • N.A. Bakar Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.
  • N.A. Johari Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.
  • M.N. Haron Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.
  • N.S.M. Desa Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.
  • U. Hashim Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Abstract


This project is about the development of n-type ISFET using silicon nitride (Si3N4) as a sensing membrane for pH measurement in biomedical applications. The theory, design, and fabrication methods, along with the experimental results are presented in this report. The gate of the ISFET is replaced by the Si3N4 sensing membrane layer that has been deposited using PECVD system to cover the gate area. Both exposed membrane of ISFET and reference electrode were immersed in pH buffer solution to measured electrical IDVD (drain current-drain voltage) and IDVG (drain current-gate voltage) characteristic in order to identify the ISFET behavior. The best pH sensitivity achieved from the experimental testing is 40.35 mV/pH.

Author Biographies

C.S. Fatt, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

N.A. Bakar, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

N.A. Johari, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

M.N. Haron, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

N.S.M. Desa, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

U. Hashim, Universiti Malaysia Perlis, Lot 106, 108, 110, Tingkat 1, Blok A, Taman Pertiwi Indah, Jalan Kangar-Alor Setar,Seriab 01000 Kangar, Perlis.

Institute of Nano Electronic Engineering

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Published

2011-06-30

How to Cite

Fatt, C., Bakar, N., Johari, N., Haron, M., Desa, N., & Hashim, U. (2011). Design and Fabrication of n-ISFET using Si3N4 as a Sensing Membrane for pH Measurement. Journal of Engineering and Technology (JET), 2, 23–30. Retrieved from https://jet.utem.edu.my/jet/article/view/177

Issue

Vol. 2 (2011): JOURNAL OF ENGINEERING AND TECHNOLOGY

Section

Articles

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